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Freescale Semiconductor Technical Data
Document Number: MRFE6VP61K25H Rev. 0, 11/2010
RF Power Field Effect Transistors
High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs
These high ruggedness devices are designed for use in high VSWR industrial (including laser and plasma exciters), broadcast (analog and digital), aerospace and radio/land mobile applications. They are unmatched input and output designs allowing wide frequency range utilization, between 1.8 and 600 MHz. * Typical Performance: VDD = 50 Volts, IDQ = 100 mA
Signal Type Pulsed (100 sec, 20% Duty Cycle) CW Pout (W) 1250 Peak 1250 CW f (MHz) 230 230 Gps (dB) 24.0 22.9 D (%) 74.0 74.6 IRL (dB) --14 --15
MRFE6VP61K25HR6 MRFE6VP61K25HSR6
1.8-600 MHz, 1250 W CW, 50 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs
* Capable of Handling a Load Mismatch of 65:1 VSWR, @ 50 Vdc, 230 MHz, at all Phase Angles, Designed for Enhanced Ruggedness, 1250 Watts Pulsed Peak Power, 20% Duty Cycle, 100 sec * Capable of 1250 Watts CW Operation Features * Unmatched Input and Output Allowing Wide Frequency Range Utilization * Device can be used Single--Ended or in a Push--Pull Configuration * Qualified Up to a Maximum of 50 VDD Operation * Characterized from 30 V to 50 V for Extended Power Range * Suitable for Linear Application with Appropriate Biasing * Integrated ESD Protection with Greater Negative Gate--Source Voltage Range for Improved Class C Operation * Characterized with Series Equivalent Large--Signal Impedance Parameters * RoHS Compliant * In Tape and Reel. R6 Suffix = 150 Units, 56 mm Tape Width, 13 inch Reel. Table 1. Maximum Ratings
Rating Drain--Source Voltage Gate--Source Voltage Storage Temperature Range Case Operating Temperature Total Device Dissipation @ TC = 25C Derate above 25C Operating Junction Temperature (1,2) Symbol VDSS VGS Tstg TC PD TJ Value --0.5, +125 --6.0, +10 -- 65 to +150 150 1333 6.67 225 Unit Vdc Vdc C C W W/C C
CASE 375D-05, STYLE 1 NI-1230 MRFE6VP61K25HR6
CASE 375E-04, STYLE 1 NI-1230S MRFE6VP61K25HSR6 PARTS ARE PUSH-PULL
RFin/VGS 3
1 RFout/VDS
RFout/VGS 4
2 RFout/VDS
(Top View)
Figure 1. Pin Connections
Table 2. Thermal Characteristics
Characteristic Thermal Resistance, Junction to Case Case Temperature 66C, 1250 W Pulsed, 100 sec Pulse Width, 20% Duty Cycle, 100 mA, 230 MHz Case Temperature 63C, 1250 W CW, 100 mA, 230 MHz Symbol ZJC RJC Value (2,3) 0.03 0.15 Unit C/W
1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1955.
(c) Freescale Semiconductor, Inc., 2010. All rights reserved.
MRFE6VP61K25HR6 MRFE6VP61K25HSR6 1
RF Device Data Freescale Semiconductor
Table 3. ESD Protection Characteristics
Test Methodology Human Body Model (per JESD22--A114) Machine Model (per EIA/JESD22--A115) Charge Device Model (per JESD22--C101) Class 2 (Minimum) B (Minimum) IV (Minimum)
Table 4. Electrical Characteristics (TA = 25C unless otherwise noted)
Characteristic Off Characteristics
(1)
Symbol IGSS V(BR)DSS IDSS IDSS
Min -- 125 -- --
Typ -- -- -- --
Max 1 -- 10 20
Unit
Gate--Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) Drain--Source Breakdown Voltage (VGS = 0 Vdc, ID = 100 mA) Zero Gate Voltage Drain Leakage Current (VDS = 50 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 100 Vdc, VGS = 0 Vdc) On Characteristics Gate Threshold Voltage (1) (VDS = 10 Vdc, ID = 1776 Adc) Gate Quiescent Voltage (VDD = 50 Vdc, ID = 100 mAdc, Measured in Functional Test) Drain--Source On--Voltage (1) (VGS = 10 Vdc, ID = 2 Adc) Dynamic Characteristics (1) Reverse Transfer Capacitance (VDS = 50 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Output Capacitance (VDS = 50 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Input Capacitance (VDS = 50 Vdc, VGS = 0 Vdc 30 mV(rms)ac @ 1 MHz)
Adc Vdc Adc Adc
VGS(th) VGS(Q) VDS(on)
1.7 1.4 --
2.2 2.2 0.15
2.7 2.9 --
Vdc Vdc Vdc
Crss Coss Ciss
-- -- --
2.8 185 562
-- -- --
pF pF pF
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 50 Vdc, IDQ = 100 mA, Pout = 1250 W Peak (250 W Avg.), f = 230 MHz, Pulsed, 100 sec Pulse Width, 20% Duty Cycle Power Gain Drain Efficiency Input Return Loss Gps D IRL 23.0 72.5 -- 24.0 74.0 --14 26.0 -- --10 dB % dB
Pulsed RF Performance (In Freescale Application Test Fixture, 50 ohm system) VDD = 50 Vdc, IDQ = 100 mA, Pout = 1250 W Peak (250 W Avg.), f = 230 MHz, Pulsed, 100 sec Pulse Width, 20% Duty Cycle Load Mismatch (VSWR 65:1 at all Phase Angles) 1. Each side of device measured separately. No Degradation in Output Power
MRFE6VP61K25HR6 MRFE6VP61K25HSR6 2 RF Device Data Freescale Semiconductor
VBIAS
+ C10 C11 C12 C13 R1 Z11
COAX1
Z3 RF INPUT Z1 Z2 C1 Z4 C3 C2
Z5
Z7
Z9
L1
Z13
Z6
C4 Z8
C5 Z10
L2
Z14
Z12
COAX2 VBIAS
R2 + C6 C7 C8 C9
+ L3 Z19 Z17 Z15 Z21 Z23 Z25 C21 C22
+ C23
+ C24
VSUPPLY
COAX3 C16 C17 Z29 RF Z30 OUTPUT C20 Z27
DUT
C14
C15
Z16
Z22 Z18 Z20 L4
Z24
Z26 C18 C19
Z28
COAX4
+ C25 C26
+ C27
+ C28
VSUPPLY
Z1 Z2 Z3, Z4 Z5, Z6 Z7, Z8 Z9, Z10
0.192 x 0.082 Microstrip 0.175 x 0.082 Microstrip 0.170 x 0.100 Microstrip 0.116 x 0.285 Microstrip 0.116 x 0.285 Microstrip 0.108 x 0.285 Microstrip
Z11*, Z12* Z13, Z14 Z15, Z16 Z17*, Z18* Z19*, Z20* Z21, Z22
0.872 x 0.058 Microstrip 0.412 x 0.726 Microstrip 0.371 x 0.507 Microstrip 0.466 x 0.363 Microstrip 1.187 x 0.154 Microstrip 0.104 x 0.507 Microstrip
Z23, Z24 Z25, Z26 Z27, Z28 Z29 Z30
1.251 x 0.300 Microstrip 0.127 x 0.300 Microstrip 0.116 x 0.300 Microstrip 0.186 x 0.082 Microstrip 0.179 x 0.082 Microstrip
* Line length includes microstrip bends
Figure 2. MRFE6VP61K25HR6(HSR6) Test Circuit Schematic -- Pulsed
MRFE6VP61K25HR6 MRFE6VP61K25HSR6 RF Device Data Freescale Semiconductor 3
C10
C11 C12
C13
C22
C23
C21 COAX1 R1 COAX3 L3
C16 C2 C4 L1 C5 L2 C14 C15 C17
CUT OUT AREA
C1
C3
C18 C19
COAX2
R2
L4 COAX4 C25
C6
C7 C8
C9 MRFE6VP61K25H Rev. 3 C26
--
C27
Figure 3. MRFE6VP61K25HR6(HSR6) Test Circuit Component Layout -- Pulsed
Table 5. MRFE6VP61K25HR6(HSR6) Test Circuit Component Designations and Values -- Pulsed
Part C1 C2, C3, C5 C4 C6, C10 C7, C11 C8, C12 C9, C13, C21, C25 C14 C15 C16, C17, C18, C19 C20 C22, C23, C24, C26, C27, C28 Coax1, 2, 3, 4 L1, L2 L3, L4 R1, R2 PCB Description 20 pF Chip Capacitor 27 pF Chip Capacitors 0.8--8.0 pF Variable Capacitor, Gigatrim 22 F, 35 V Tantalum Capacitors 0.1 F Chip Capacitors 220 nF Chip Capacitors 1000 pF Chip Capacitors 43 pF Chip Capacitor 75 pF Metal Mica 240 pF Chip Capacitors 6.2 pF Chip Capacitor 470 F, 63 V Electrolytic Capacitors 25 Semi Rigid Coax, 2.2 Long 5 nH Inductors 6.6 nH Inductors 10 Chip Resistors 0.030, r = 2.55 Part Number ATC100B200JT500XT ATC100B270JT500XT 27291SL T491X226K035AT CDR33BX104AKYS C1812C224K5RACTU ATC100B102JT50XT ATC100B430JT500XT MIN02--002EC750J--F ATC100B241JT200XT ATC100B6R2BT500XT MCGPR63V477M13X26--RH UT--141C--25 A02TKLC GA3093--ALC CRCW120610R0JNEA AD255A Manufacturer ATC ATC Johanson Kemet AVX Kemet ATC ATC CDE ATC ATC Multicomp Micro--Coax Coilcraft Coilcraft Vishay Arlon
MRFE6VP61K25HR6 MRFE6VP61K25HSR6 4 RF Device Data Freescale Semiconductor
---
--
C24
C20
C28
TYPICAL CHARACTERISTICS
2000 Pout, OUTPUT POWER (dBm) PULSED 1000 Ciss 66 65 64 63 62 61 60 59 35 VDD = 50 Vdc, IDQ = 100 mA, f = 230 MHz Pulse Width = 100 sec, 20% Duty Cycle 36 37 38 39 40 41 42 P3dB = 61.9 dBm (1553 W) P2dB = 61.7 dBm (1472 W) Ideal
C, CAPACITANCE (pF)
100
Coss
P1dB = 61.3 dBm (1333 W) Actual
10 Crss 1 Measured with 30 mV(rms)ac @ 1 MHz VGS = 0 Vdc 0 10 20 30 40 50 VDS, DRAIN--SOURCE VOLTAGE (VOLTS)
Pin, INPUT POWER (dBm) PULSED
Note: Each side of device measured separately. Figure 4. Capacitance versus Drain-Source Voltage
26 25 Gps, POWER GAIN (dB) 24 23 Gps 22 21 D 20 100 1000 Pout, OUTPUT POWER (WATTS) PULSED 30 2000 50 40 VDD = 50 Vdc, IDQ = 100 mA, f = 230 MHz Pulse Width = 100 sec, 20% Duty Cycle 90 80 D, DRAIN EFFICIENCY (%) Gps, POWER GAIN (dB) 70 60 26 25 24 23 22 21 20 19 18 17 16 0
Figure 5. Pulsed Output Power versus Input Power
VDD = 50 Vdc, IDQ = 100 mA, f = 230 MHz Pulse Width = 100 sec, 20% Duty Cycle
50 V 40 V 35 V VDD = 30 V 200 400 600 800 1000 1200 1400 1600 45 V
Pout, OUTPUT POWER (WATTS) PULSED
Figure 6. Pulsed Power Gain and Drain Efficiency versus Output Power
90 80 D, DRAIN EFFICIENCY (%) 70 60 50 40 30 20 VDD = 50 Vdc, IDQ = 100 mA, f = 230 MHz Pulse Width = 100 sec, 20% Duty Cycle 0 200 400 600 800 1000 1200 1400 1600 VDD = 30 V 35 V 40 V 45 V 50 V Gps, POWER GAIN (dB) 26
Figure 7. Pulsed Power Gain versus Output Power
90 80 D, DRAIN EFFICIENCY (%)
VDD = 50 Vdc, IDQ = 100 mA, f = 230 MHz 25 Pulse Width = 100 sec, 20% Duty Cycle 24 23 25_C TC = --30_C
--30_C 25_C
85_C 70 60 50
22 Gps 21 20 19 100 D 1000 Pout, OUTPUT POWER (WATTS) PULSED 85_C
40 30 20 2000
Pout, OUTPUT POWER (WATTS) PULSED
Figure 8. Pulsed Drain Efficiency versus Output Power
Figure 9. Pulsed Power Gain and Drain Efficiency versus Output Power
MRFE6VP61K25HR6 MRFE6VP61K25HSR6 RF Device Data Freescale Semiconductor 5
TYPICAL CHARACTERISTICS
109 108 MTTF (HOURS) 107 106 105 104 90 110 130 150 170 190 210 230 250 TJ, JUNCTION TEMPERATURE (C) This above graph displays calculated MTTF in hours when the device is operated at VDD = 50 Vdc, Pout = 1250 W CW, and D = 74.6%. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product.
Figure 10. MTTF versus Junction Temperature -- CW
MRFE6VP61K25HR6 MRFE6VP61K25HSR6 6 RF Device Data Freescale Semiconductor
Zsource
f = 230 MHz
Zo = 5 Zload f = 230 MHz
VDD = 50 Vdc, IDQ = 100 mA, Pout = 1250 W Peak f MHz 230 Zsource 1.29 + j3.54 Zload 2.12 + j2.68
Zsource = Test circuit impedance as measured from gate to gate, balanced configuration. Zload = Test circuit impedance as measured from drain to drain, balanced configuration.
Input Matching Network
+
Device Under Test
--
Output Matching Network
-Z source Z
+ load
Figure 11. Series Equivalent Source and Load Impedance
MRFE6VP61K25HR6 MRFE6VP61K25HSR6 RF Device Data Freescale Semiconductor 7
PACKAGE DIMENSIONS
MRFE6VP61K25HR6 MRFE6VP61K25HSR6 8 RF Device Data Freescale Semiconductor
MRFE6VP61K25HR6 MRFE6VP61K25HSR6 RF Device Data Freescale Semiconductor 9
MRFE6VP61K25HR6 MRFE6VP61K25HSR6 10 RF Device Data Freescale Semiconductor
MRFE6VP61K25HR6 MRFE6VP61K25HSR6 RF Device Data Freescale Semiconductor 11
PRODUCT DOCUMENTATION AND SOFTWARE
Refer to the following documents and software to aid your design process. Application Notes * AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins * EB212: Using Data Sheet Impedances for RF LDMOS Devices Software * Electromigration MTTF Calculator * RF High Power Model * .s2p File For Software, do a Part Number search at http://www.freescale.com, and select the "Part Number" link. Go to the Software & Tools tab on the part's Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision 0 Date Nov. 2010 * Initial Release of Data Sheet Description
MRFE6VP61K25HR6 MRFE6VP61K25HSR6 12 RF Device Data Freescale Semiconductor
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MRFE6VP61K25HR6 MRFE6VP61K25HSR6
Document Number: RF Device Data MRFE6VP61K25H Rev. 0, 11/2010 Freescale Semiconductor
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